CXMT says it plans to launch a 4F² design DRAM chip for data center servers before the end of 2026, achieving a breakthrough that rivals have pursued for years (Bloomberg)

China's CXMT is reportedly set to challenge the dominance of Korean memory makers Samsung Electronics and SK hynix with a new DRAM technology. According to reports from South China Morning Post and other Chinese media, CXMT plans to launch a server memory product by the end of the year that incorporates a next-generation memory cell architecture. This architecture, referred to as 4F square, promises to reduce the space occupied by each memory cell, potentially giving CXMT a competitive edge over its Korean counterparts.

CXMT President Cao Kanyu revealed the company's plans during an industrial event in Shanghai. The 4F square design involves a design called 4F square, which reduces the area occupied by each memory cell to an equivalent of four times F squared. In contrast, the current industry standard is 6F square, indicating that the new technology could theoretically decrease the area occupied by each memory cell.

F represents the minimum line width that a given DRAM manufacturing process can draw, with current processes like 1a, 1b, and 1c having F just over 10 nanometers.