CXMT's new DRAM tech to test Korean memory makers' dominance
Concerns are growing that the technological gap between China's CXMT and Korean memory makers Samsung Electronics and SK hynix in DRAM technology has already narrowed, after the Chinese company unveiled plans to launch server memory product by the end of this year featuring a next-generation memory cell architecture that remains only on the technology road maps of the two Korean chipmakers.…
Concerns are mounting that China's CXMT is catching up to Korean memory giants Samsung Electronics and SK hynix in DRAM technology. CXMT recently announced plans to release a server memory product by year-end, featuring an innovative memory cell architecture. This new design, dubbed "4F square," promises to significantly outperform the current industry standard of "6F square."
CXMT President Cao Kanyu revealed the company's intentions during an industrial event in Shanghai. The 4F square architecture reduces the space each memory cell occupies by utilizing a design where F represents the minimum line width that a given DRAM manufacturing process can draw. Currently, this minimum line width is just over 10 nanometers.
With the 4F square architecture, each cell would occupy an area equivalent to four times F squared. This theoretical advancement could potentially give CXMT a competitive edge over Samsung Electronics and SK hynix in the DRAM market.
Written by urgent.news from The Korea Times's reporting — not their text. Machine-written — may contain errors; check the original before relying on it.
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- CXMT's new DRAM tech to test Korean memory makers' dominance koreatimes.co.kr
