CXMT's new DRAM tech to test Korean memory makers' dominance
Concerns are growing that the technological gap between China's CXMT and Korean memory makers Samsung Electronics and SK hynix in DRAM technology has already narrowed, after the Chinese company unveiled plans to launch server memory product by the end of this year featuring a next-generation memory cell architecture that remains only on the technology road maps of the two Korean chipmakers.…
China's CXMT is reportedly set to challenge the dominance of Korean memory makers Samsung Electronics and SK hynix with a new DRAM technology. According to reports from South China Morning Post and other Chinese media, CXMT plans to launch a server memory product by the end of the year that incorporates a next-generation memory cell architecture. This architecture, referred to as 4F square, promises to reduce the space occupied by each memory cell, potentially giving CXMT a competitive edge over its Korean counterparts.
CXMT President Cao Kanyu revealed the company's plans during an industrial event in Shanghai. The 4F square design involves a design called 4F square, which reduces the area occupied by each memory cell to an equivalent of four times F squared. In contrast, the current industry standard is 6F square, indicating that the new technology could theoretically decrease the area occupied by each memory cell.
F represents the minimum line width that a given DRAM manufacturing process can draw, with current processes like 1a, 1b, and 1c having F just over 10 nanometers.
Written by urgent.news from The Korea Times's reporting — not their text. Machine-written — may contain errors; check the original before relying on it.
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- CXMT's new DRAM tech to test Korean memory makers' dominance koreatimes.co.kr
