Samsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year

SEOUL, September 29 - Samsung Electronics anticipates that high-bandwidth memory (HBM) will represent nearly 30% of the total wafer capacity for Dynamic Random-Access Memory (DRAM) chips next year, an increase from roughly 20% currently, according to an executive's statement on Tuesday.

HBM and standard DRAM compete for the same wafer capacity, which means that expanding HBM production could potentially reduce the supply of standard DRAM. HBM is a vital component for AI computing, comprising vertically stacked memory chips that enable processors to access vast quantities of data at high speeds. The market is currently dominated by South Korean firms SK Hynix and Samsung Electronics, along with US-based Micron Technology.