Samsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year
SEOUL: A Samsung Electronics executive said on Tuesday that high-bandwidth memory (HBM) is expected to account for nearly 30% of Dynamic Random-Access Memory (DRAM) chipmakers’ total wafer capacity next year, up from about 20% currently. Samsung Electronics Executive Vice President Kim Taewoo said HBM and standard DRAM compete for the same wafer capacity, meaning expanding HBM output could…
Samsung Electronics announced on Tuesday that high-bandwidth memory (HBM) is projected to make up nearly 30% of Dynamic Random-Access Memory (DRAM) chipmakers' total wafer capacity next year, compared to around 20% currently. Executive Vice President Kim Taewoo noted that HBM and standard DRAM compete for the same wafer capacity, indicating that a rise in HBM production could potentially limit the availability of standard DRAM.
HBM is a vital component for artificial intelligence computing, featuring vertically stacked memory chips that enable processors to access substantial amounts of data at high speeds. The market is currently controlled by South Korean companies SK Hynix and Samsung Electronics, along with US-based Micron Technology.
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