Samsung, ASML expand partnership to introduce next-gen lithography by 2028

Samsung Electronics and ASML, the leading semiconductor equipment manufacturer, have announced plans to bolster their collaboration on advanced high numerical aperture (High NA) extreme ultraviolet (EUV) lithography technology. The companies aim to integrate this cutting-edge technology into Samsung's Dynamic Random Access Memory (DRAM) manufacturing processes by 2028, marking a significant milestone in the industry.

Under the terms of their renewed partnership, Samsung and ASML will collaborate to expedite the development and implementation of technologies that will enable the production of ever-finer circuit patterns. These patterns are crucial for advancing semiconductor performance and efficiency.

EUV lithography plays a pivotal role in this process. The technology projects intricate circuit designs onto a silicon wafer using light, with the circuit pattern initially formed on a photomask. The EUV light then reflects off the mask, and an optical system reduces and projects the image onto the wafer. Increasing the numerical aperture (NA) of the optical system is one method to achieve finer circuit patterns as semiconductor technology continues to evolve.

This expanded partnership signifies Samsung's commitment to driving innovation in the semiconductor sector. By integrating ASML's High NA EUV lithography into their DRAM mass production by 2028, the companies aim to set new industry standards and meet the demanding performance and efficiency requirements of advanced semiconductor manufacturing.