Micron, CXMT Unveil New Memory Push
A new variable has emerged for Samsung Electronics and SK hynix, which have been leading the artificial intelligence (AI) memory market spearheaded by high bandwidth memory (HBM). US-based Micron unveiled next-generation memory specialized for physical AI, and China’s ChangXin Memory Technologies (C
A new variable has emerged in the artificial intelligence (AI) memory market, led by high bandwidth memory (HBM), where US-based Micron and China’s ChangXin Memory Technologies (CXMT) have unveiled their next-generation memory architectures. Despite Samsung Electronics and SK hynix currently leading in memory technology, they are focusing on enhancing existing technologies such as Compute Express Link (CXL), Processing-in-Memory (PIM), and High Bandwidth Flash (HBF).
Experts believe that these companies must demonstrate a 'super gap' with their new technologies to reassure investors and maintain market stability. Micron presented its 'Edge Inference Memory' (EIM) at the 18th Semiconductor Exhibition (SEDEX 2026) in Seoul, describing it as a next-generation product that combines low-power DRAM (LPDDR) with AI computation logic to reduce latency and increase bandwidth.
CXMT, meanwhile, announced its progress in 4F² architecture, aiming to miniaturize processes and innovate architectures. Both companies are targeting different markets, with Micron focusing on physical AI applications like autonomous driving and CXMT on server products utilizing the architecture. While CXMT's revenue growth projections are impressive, actual product performance and client acquisition will determine future competitiveness.
The memory market's center is not fixed, and the emergence of physical AI could lead to separate markets for low-power, high-bandwidth memory.
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