Samsung to use TSMC tech for Nvidia’s next-gen memory chips: Report

Samsung Electronics will utilize TSMC's 3-nanometre process to manufacture base dies for Nvidia's upcoming high-bandwidth memory (HBM) chips, according to a report in the Seoul Economic Daily. This marks the inaugural instance of Samsung collaborating with TSMC at the HBM manufacturing stage, as per the report. Nvidia has solicited Samsung, SK Hynix, and Micron Technology to employ TSMC's process for NVHBM base dies, as well as sixth-generation DRAM technology for its core dies, according to the newspaper, which cited industry sources.

NVHBM, introduced in August, integrates Nvidia's custom memory controller into the base die and aims to standardize the implementation across various memory suppliers, the company stated. Samsung accepted Nvidia's stipulations following an internal evaluation, but intends to maintain its in-house production approach for conventional HBM and custom products for other clients, according to the Seoul Economic Daily.

Additionally, the newspaper reported that the company is evaluating whether its own foundry could fabricate NVHBM base dies if demand surpasses TSMC's capacity, as per an unnamed source.