SK hynix Sees AI Infrastructure Growing 20-Fold by 2030
As the demand for artificial intelligence (AI) inference surges, competition in the semiconductor industry is expanding beyond the performance of individual memory toward optimizing the overall structure. SK hynix has put forward next-generation memory technologies, including the advancement of high
SK hynix predicts the AI infrastructure market will expand 20 times by 2030, driven by surging demand for AI inference. The company, which specializes in semiconductor development, is addressing bottlenecks in data movement between memory layers as AI processing becomes more complex. Ahn Hyun, SK hynix's development head, highlighted three key drivers for growth: 'task complexity,' 'context length,' and 'inference request volume.'
To tackle these challenges, SK hynix unveiled next-generation memory solutions such as 3D stacked DRAM and high bandwidth flash (HBF). 3D stacked DRAM aims to reduce the physical distance between computing units and data by stacking DRAM on top of logic semiconductors like GPUs and neural processing units (NPUs). HBF, on the other hand, applies TSV stacking and high-speed input/output technologies from HBM to NAND flash, creating a new memory hierarchy between HBM and DRAM.
SK hynix's goal is to maintain HBF's bandwidth at half that of HBM while increasing its capacity by about 10 times. Samsung Electronics also showcased advanced memory technologies at SEDEX 2026, including HBM4E, a high-performance memory for AI, and LPDDR-PIM, which integrates computing functions into memory. Samsung's mock-ups of 'zHBM' and 'zNAND-O,' a 3D NAND solution tailored for edge AI, were also displayed.
The Korea Semiconductor Industry Association organized the exhibition, which featured 300 companies operating 888 booths.
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