KAIST's HBM pioneer honored with S&T Innovation Award
As artificial intelligence (AI) drives demand for ever-faster computing, Kim Joung-ho, a professor from Korea Advanced Institute of Science & Technology (KAIST), credited with helping lay the foundations for high-bandwidth memory (HBM), will receive a science and technology innovation award recognizing his contributions to Korea’s semiconductor industry. The Daejeon Development Committee will…
A professor at the Korea Advanced Institute of Science & Technology (KAIST) has been honored with a S&T Innovation Award for his pioneering work in high-bandwidth memory (HBM). Kim Joung-ho's contributions to Korea's semiconductor industry have been recognized by the Daejeon Development Committee, who will present the prestigious Science and Technology Innovation Award to him at Lotte City Hotel Daejeon on Thursday morning.
For over three decades, Kim has focused on researching next-generation memory technologies, including HBM, high-bandwidth flash, and high-bandwidth SRAM. He is credited with laying the foundations for HBM and playing a crucial role in its development and commercialization. In 2009, Kim proposed core concepts and the basic architecture of HBM, and he participated in key design and technology validation work during its development.
His efforts were instrumental in SK hynix's successful commercialization of HBM technology in December 2013.
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- KAIST's HBM pioneer honored with S&T Innovation Award koreatimes.co.kr
