Ions help electrons hop through porous material with potential for brain-inspired computing
Next-generation computing technologies could be one step closer to emulating how neurons respond and communicate with each other, thanks to research examining how electrons and ions move through materials.
Researchers at Texas A&M University have uncovered a mechanism by which electrons and ions move through a type of porous material called metal-organic frameworks (MOFs), potentially paving the way for brain-inspired computing devices. Dr. Perla Balbuena and her team used advanced computer simulations to study how electrons hop between specific sites on the MOF's organic linkers, rather than moving freely throughout the structure.
Ions within the material facilitate this hopping, demonstrating a close connection between ionic and electronic transport. The findings could guide the development of neuromorphic devices, which aim to mimic the energy-efficient processing and memory capabilities of the brain. In traditional digital computers, processing and memory are separate, leading to constant data transfer and high energy consumption.
In contrast, biological brains process and store information simultaneously, making them highly efficient. MOFs, with their unique structures and ability to change electrical behavior in response to stimuli, may play a crucial role in the design of future analog and neuromorphic technologies that could process information more efficiently.
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