CXMT reportedly begins risk production of HBM3E memory in breakthrough for Chinese DRAM production — company could be in mass production in 2027

China's DRAM leader, ChangXin Memory Technologies (CXMT), has initiated risk production of HBM3E memory, according to a report by The Information. While CXMT lags behind the top three memory manufacturers in terms of overall technology, the achievement of HBM3E marks their significant technological advancements. (AI data centers are consuming the world's memory and storage supply, and Samsung has unveiled three new next-generation memory technologies for AI data centers.)

The specifications of CXMT's HBM3E products remain undisclosed due to the nature of risk production. However, HBM3E modules employ a 1,024-bit-wide memory interface, support data transfer rates of up to 9.6 GT/s per pin, and can stack eight or twelve memory devices, providing up to 1.228 TB/s of memory bandwidth when using high-speed bins. The memory capacity varies depending on the number of DRAM dies used in a stack, with 24GB using an eight-die stack and 36GB using a 12-die stack with 24Gb DRAM devices.

Several Chinese developers of advanced processors, such as Alibaba Group's T-Head and Cambricon Technologies, are currently evaluating CXMT's HBM3E for their processors, as per the report. If testing and qualification go as planned, these companies could begin incorporating CXMT's HBM3E in commercial products as early as next year. The production of HBM3E by CXMT will be crucial for several reasons, with CXMT's ability to manufacture usable HBM being more important than the HBM3E generation itself.