Kioxia and Sandisk unveil 9th-gen QLC flash memory technology

MILPITAS, Calif. and TOKYO - Kioxia Corporation and Sandisk Corporation jointly unveiled their latest 9th-generation QLC 3D flash memory technology tailored for AI-driven infrastructure storage needs. This new technology employs the companies' CMOS directly Bonded to Array (CBA) architecture, which integrates an advanced CMOS wafer with a memory-array platform.

The 9th-generation device boasts a NAND interface speed of 4.8Gb/s, a 33% boost compared to the 8th-generation models. Its 6-plane architecture provides superior write and read bandwidth, accompanied by enhanced write and read power efficiency. Kioxia's Chief Technology Officer, Hideshi Miyajima, stated that by merging their memory cell technology with cutting-edge CMOS, they are expediting the development of the 9th-generation flash memory, striking a balance between high performance and cost-efficiency.

Sandisk's Chief Technology Officer, Alper Ilkbahar, highlighted the flexibility of the CBA architecture, enabling independent advancements in CMOS and memory technologies. This innovative approach allows for the separate manufacturing of CMOS and cell array wafers before bonding them together. The technology is specifically designed for cloud and data-intensive applications.

Kioxia is a subsidiary of Kioxia Holdings Corporation. The companies' collaboration continues their joint efforts in advancing 3D flash memory technology.