GlobalFoundries VP details FDX Fusion technology, sporting 7nm-class performance without the need for EUV tools — company targets 2030 for high-volume manufacturing, with planar transistors in tow
GlobalFoundries reveals new details about its FDX Fusion technology, which promises 7nm-class performance and 8nm-class logic density using planar FD-SOI transistors without EUV lithography, shares what is next for FDX Fusion node, and the FDX program in general.
GlobalFoundries' vice president of the FD-SOI business unit, Sudipto Bose, recently detailed the company's FDX Fusion technology in an interview with Tom's Hardware Premium. FDX Fusion is an innovative process that promises 7nm-class performance without the need for Extreme Ultraviolet (EUV) lithography or FinFET transistors. This technology relies on advanced planar fully depleted silicon-on-insulator (FD-SOI) transistors, strained silicon substrates, and aggressive optical patterning techniques.
Bose shared that the company has invested in FD-SOI for over eight years, and the FDX Fusion technology is built on this investment thesis. The process is designed for applications in connectivity, edge processors (MCUs with inference), automotive radar, and data centers. The key improvements of FDX Fusion include a 500 GHz fT/fmax, which benefits connectivity, automotive radar, and data center segments looking to improve data speeds.
Additionally, the technology offers 2.2 times higher digital gate density compared to the current generation FDX. FDX Fusion will be manufactured using deep ultraviolet (DUV) lithography, requiring extensive multipattering for the most critical layers.
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