Memory Giants Split Over 4F² DRAM Strategy
As United States-based Micron abandons the commercialization of the ‘4F² (4F Square)’ cell structure, which has been considered a core technology for next-generation DRAM, the technological development strategies of the top three global memory semiconductor companies are diverging. Unlike Samsung El
Micron, a United States-based memory semiconductor company, has abandoned the commercialization of its '4F²' (4F Square) cell structure, a technology once considered crucial for next-generation DRAM. This decision marks a divergence in the technological development strategies of the top three global memory semiconductor companies: Micron, Samsung Electronics, and SK hynix.
While Samsung Electronics and SK hynix continue to develop the 4F² technology, Micron plans to focus on enhancing existing processes and 3D DRAM. The semiconductor industry, facing physical miniaturization limits, expects the future competitive landscape to shift based on these technological choices.
Micron's Executive Vice President and Chief Technology and Product Officer, Scott DeBoer, stated that despite years of research into 4F², the company decided not to pursue commercialization due to process complexity, increased costs, and the fundamental limits of miniaturization. DeBoer dismissed the notion that 4F² provides practical advantages over the existing 6F² structure as "somewhat close to a myth," arguing that implementing 4F² leads to increased costs and complexity at advanced process stages.
Instead, Micron aims to concentrate on developing wafer bonding and 3D DRAM technology while improving the established 6F² structure. The company plans to commence mass production of the next-generation 1-delta (1δ) DRAM in late 2027, following its current 1-gamma (1γ) process. For the upcoming 1-epsilon (1ε) process, Micron intends to boost integration density via bonding technology that unites diverse wafers.
Ultimately, Micron intends to transition to 3D DRAM, with timing decisions based on manufacturing costs and performance.
In contrast, Samsung Electronics and SK hynix are persisting with the development of 4F² technology. Samsung Electronics is exploring the use of Vertical Channel Transistors (VCT) to reduce cell area, while SK hynix is advancing a next-generation cell structure based on Vertical Gates (VG). Both companies maintain 4F² as a potential candidate for next-generation technology, unlike Micron.
Additionally, Chinese firms, such as ChangXin Memory Technologies (CXMT), are also developing 4F²-based server DDR5 memory modules, although actual product performance, mass production yields, and manufacturing cost competitiveness remain uncertain. Consequently, the competition in the next-generation DRAM market is projected to evolve beyond mere circuit miniaturization into a contest of integration density improvement effects and mass production economics, with the cell area reduction through 4F², existing process enhancement, and 3D stacking being compared for their potential to secure higher integration density and lower production costs.
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