CXMT president says company’s first 4F² DRAM will be a server DDR5 RDIMM due by year-end
CXMT president Cao Kanyu says the company’s first 4F² DRAM product will be a DDR5 RDIMM for servers, expected by the end of 2026.
CXMT president Cao Kanyu announced that the company's first 4F² product, a server DDR5 RDIMM, will be launched by the end of the year. The memory will utilize a denser cell layout with vertical transistors, reducing the cell's footprint by about one-third. Specific speeds and capacities for the new product have not been disclosed.
Cao discussed the new RDIMM at the Integrated Chips and Chiplets Conference. The 4F² cell is 2F by 2F, approximately two-thirds the area of existing 6F² cells at the same feature size. The company has filed patents and conducted research on the technology since 2021. CXMT's transistor design, called the Vertical Surrounded Gate (VSG), has a vertically standing channel with a gate wrapped around it, enabling stronger gate control with reduced leakage.
The company has over 300 published patent families related to 4F². The industry is moving towards 4F² with 3D solutions that decouple DRAM and CMOS processes, optimizing logic and cell density independently through wafer-level hybrid bonding. CXMT has been gaining manufacturing and market-share in China, with a 9.5% share of global DRAM revenue in Q2, up from 7.6% in Q1.
Samsung showcased a 4F² DRAM design in its ISSCC 2026 paper, and SK hynix announced plans for a 4F² vertical-gate platform and 3D DRAM at nodes of 10nm and below.
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