Chinese memory-maker CXMT claims DRAM production breakthrough
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Chinese memory company CXMT has announced it has begun mass production of chips using a fifth-generation process, which effectively doubles memory density. This innovation allows the company to produce twice as many memory chips from a single wafer. The breakthrough comes through a high-k dielectric metal gate process that was adapted for DRAM (Dynamic Random Access Memory) production.
CXMT claims its new process puts it on par with its rivals in the memory-making industry. The company's evidence of its success is a pair of LPDDR5X memory modules capable of storing 24GB of data, designed for use in smartphones and other high-end consumer electronics. If CXMT's claims about improved density and mass production are accurate, and the new products do not become prohibitively expensive, it would be a boon for Chinese electronics manufacturers who are currently grappling with affordable memory shortages due to supply chain issues stemming from AI-related demand.
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Also reported by 1 other outlet
- Chinese memory-maker CXMT claims DRAM production breakthrough theregister.com
