TSMC to start using High-NA EUV lithography in 2030 — A10 or A11 technology prime candidates for use
TSMC discloses plans to use High-NA EUV lithography in 2030, 6×12-inch photomasks with new scanners in 2033.
Taiwan Semiconductor Manufacturing Company (TSMC) is set to start using high-numerical aperture extreme ultraviolet (EUV) lithography in 2030, with advanced nodes A10 or A11 as the prime candidates for adoption. The company has been cautious about announcing such plans due to the substantial investment required. EUV systems with a 0.55 numerical aperture can produce an 8nm single-exposure resolution, which is a significant improvement over today's Low-NA EUV systems that deliver a 13nm single-exposure resolution.
However, the reduced exposure field of High-NA EUV tools poses challenges for manufacturing large dies. To address this, TSMC is collaborating with ASML to develop 6×12-inch photomasks. The transition to High-NA EUV lithography will likely be gradual, beginning with conventional 6-inch masks in 2030, followed by the adoption of 12-inch masks by 2033 to enable greater scanner productivity and support the demand for smaller, faster, and more energy-efficient chips.
ASML is optimistic about this transition, as it has the support of TSMC and other industry players, including Intel and Samsung.
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