SK Hynix to make first HBM in US, produce tens of thousands of sheets per year in Indiana

SK하이닉스, the South Korean technology giant, is set to manufacture its first High Bandwidth Memory (HBM) chips in the United States. The company has invested over $4 billion to build a cutting-edge HBM fabrication facility in Indiana, with plans to start producing hundreds of thousands of wafers annually from the second half of 2029.

The inauguration of this first production facility took place at Purdue University's Holzer Hall gymnasium in West Lafayette, Indiana on the 27th of this month. The advanced packaging facility is a significant milestone for SK하이닉스 as they aim to become the sole provider of 'Made in USA' HBM memory to American customers. While the DRAM wafers used in production are still manufactured in South Korea, this move represents a strategic shift in the American AI and semiconductor supply chain.

The facility will not only create around 1000 jobs directly in manufacturing, engineering, and R&D but also indirectly support over 7000 jobs through collaborations with various material, component, and equipment companies. The event also honored three Korean war veterans, Robert Brown (99), Francis William (96), and Norman Hitten (95), as part of the company's effort to expand the relationship between military and advanced industries.

The presence of high-ranking officials such as South Korea's Ambassador to the United States, Indiana Governor Mike Pence, U.S. Senator Todd Young, Purdue University President Todd Atkins, and the Commander of U.S. Forces in Korea, reflects the growing emphasis on advanced industry and personnel collaboration in the US-Korea relationship.