Nvidia is raising AI server prices by more than 15% as memory costs soar
The increases will apply to systems containing Vera Rubin and Grace Blackwell chips and take effect on shipments early next year
SK hynix anticipates hybrid bonding to not be available for HBM4E, with the industry's anticipated memory packaging transition shifting to HBM5. HBM cubes are limited to a total thickness of 775 microns, making it necessary to use thinner dies and narrower gaps for additional DRAM layers. SK hynix's mass reflow-molded underfill (MR-MUF) process faces challenges in filling these smaller gaps while controlling warpage on sub-50-micron dies.
Hybrid bonding is currently still in the research stage for stacks of 20 layers and above, with SK hynix deciding which product will be first to implement it. The iHBM concept, which embeds thermally conductive blocks into the base die's die-to-die PHY region, aims to reduce thermal resistance and has been benchmarked against Samsung's Heat Path Block approach and Micron's base-die circuit redesign.
Written by urgent.news from Tom's Hardware's reporting — not their text. Machine-written — may contain errors; check the original before relying on it.
