Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift
A research team at Kyoto University has built a silicon carbide transistor that operates at 600°C (873 K) using ion implantation.
Researchers at Kyoto University have developed a silicon carbide (SiC) transistor capable of functioning at temperatures up to 600°C. They achieved this by using standard ion implantation methods and a bottom-gate design, which effectively addresses leakage and voltage drift issues present in conventional top-gate JFET transistors.
This innovation allows the transistor to maintain a threshold voltage discrepancy of under 0.1V at 400°C, significantly improving upon the 2V discrepancy seen in traditional layouts. By employing a double-well isolation structure, the team was able to isolate each device within a pn junction, preventing the semi-insulating SiC substrate from losing its insulating properties as it heats up and causing leakage current to bleed through the wafer.
While NASA Glenn Research Center has demonstrated SiC JFET integrated circuits operating at 500°C and 60 days on a simulated Venus surface, the Kyoto University transistor represents a breakthrough in integrating high-temperature logic into existing manufacturing processes. However, the transistor is currently normally-on, conducting without a gate voltage and consuming standby power, necessitating the development of normally-off devices to build efficient, low-power complementary circuits.
The researchers plan to address challenges such as long-duration reliability at extreme temperatures and heat-tolerant packaging before the transistor can be utilized in applications like gas turbines or Venusian environments.
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