Samsung's fab roadmaps examined — Taylor, Pyeongtaek, and the yield woes behind a $16.5 billion Tesla deal
Divided across two countries and four campuses, Samsung's fab roadmap runs from the Korean bases at Pyeongtaek, Hwaseong, and Giheung to the new U.S. site at Taylor.
Samsung's foundry roadmap is spread across two countries, four campuses, and includes facilities in Pyeongtaek, Hwaseong, Giheung, and Taylor, Texas. Samsung initiated mass production of its first-generation 2nm process in 2025, transferred equipment to the delayed Taylor, Texas fab in April 2026, and secured a $16.5 billion contract with Tesla for its AI6 processor under a seven-year deal.
Despite these milestones, Samsung has yet to close the gap with TSMC in terms of profitability, as Samsung's 2nm yields are reported to be around 55%, falling short of the necessary threshold for running advanced nodes profitably. The company's foundry unit, situated within the Device Solutions division alongside its memory business, has reported record profits, allowing Samsung to absorb the cost of the yield gap.
The $44 billion Taylor project in Texas, involving two fabs, an advanced packaging facility, and an R&D center, has been under construction for years due to a lack of committed customers and yield issues on the node. Construction resumed in April 2026, and the facility is set to install a third-generation SF2P+ variant of its 2nm process, with trial production targeted for the end of 2026 and full mass production in 2027.
Samsung's Pyeongtaek production base remains its largest, with a 2029 production target for the final planned fab at the site. Meanwhile, Hwaseong and Giheung are dedicated to research and development, focusing on EUV lines and advanced-node R&D, respectively. Samsung's 2nm family includes SF2, SF2P, SF2P+, SF2Z, and SF1.4, with the latter now slated for a 2029 mass production target.
The company's first confirmation of High-NA EUV's role in production plans came at the 2026 Next-Generation Lithography + Patterning Conference, with High-NA EUV set to enter production with the 1nm-class SF1A node around 2030.
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