New 2D memory device stores data on just a single electron

Scientists from China have developed a novel chip that employs a single electron to store data, marking a potential breakthrough for energy-efficient and high-speed memory devices. Their research, published in the journal Science, showcases a two-dimensional (2D) flash memory chip capable of trapping a solitary electron at room temperature, thus reducing energy consumption during data processing.

This device has been dubbed "Guiyi," a term signifying "return to one" in Chinese Buddhism, reflecting the chip's innovative use of a single electron to hold a single bit of data. Guiyi's strengths lie in its promise to address three major challenges in the semiconductor industry: energy efficiency, speed, and stability. Chunsen Liu, an engineer at Fudan University and co-author of the study, highlighted the growing demands for storage speed, capacity, energy efficiency, and stability in the era of artificial intelligence (AI).

By enabling the storage of one bit of information through the modification of a single electron's state, Guiyi could significantly lower power usage while simultaneously expanding storage capacity. To tackle the challenge of weak signals generated when trapping a single electron—compared to the ripple of a single raindrop in a reservoir—the researchers designed the chip with a graphene layer preceding the floating gate.

Graphene, a single-atom-thick layer of carbon atoms arranged in a hexagonal lattice, facilitates low-resistance electron movement and high-speed data transfer with minimal energy loss. This layer enhances electron acceleration, resulting in a stronger electrical pulse from the trapped electron and a 0.5-volt signal—10 times more powerful than previous attempts using single electrons.

However, scaling up Guiyi for commercial use poses significant hurdles. While the technology represents a robust proof of concept, industrial-scale production remains a formidable challenge. Andrew Humphris, a professor of nanoimaging at the University of Bristol and founder of Infinitesima, underscored that the semiconductor industry, dominated by Samsung, SK hynix, and Micron, is increasingly prioritizing high-bandwidth memory over non-volatile memory like Guiyi due to demand bottlenecks caused by the rapid growth of AI workloads and large language models.

This shift has led to a NAND flash memory shortage and rising prices. The real challenge, according to Humphris, lies in manufacturing the technology reliably, repeatedly, and economically—similar to ASML's two-decade journey from research lab to commercial EUV technology production. Despite these obstacles, Fudan University researchers led by Zhou Peng, a microelectronics professor, have ambitious plans to commercialize Guiyi within three to five years.

If successful, this breakthrough could revolutionize the flash storage market and accelerate AI applications across various industries.