SK hynix approves $38B+ investment in two new memory fabs
The board of SK hynix Inc., a major data center memory supplier, today approved the construction of two new fabs. The initiative will cost 54 trillion South Korean won, or about $38.3 billion. It’s part of a broader $430 billion investment plan designed to expand SK hynix’s manufacturing capacity. That initiative, in turn, is itself […] The post SK hynix approves $38B+ investment in two new…
SK hynix, a leading data center memory supplier, has approved an investment of over $38.3 billion to construct two new semiconductor fabrication facilities. This move is part of the company's broader $430 billion investment plan to expand its manufacturing capacity, which is also backed by the South Korean government's efforts to boost the local chip sector.
The first new fab, Yongin Y2, will be a $25 billion facility dedicated to DRAM manufacturing and will be built at the Yongin Semiconductor Cluster, a manufacturing site about 20 miles south of Seoul. The first cleanroom and 279 acres of floor space at the Yongin Y2 site are scheduled to be operational by June 2029. The second fab will produce NAND flash memory and will be built on a site already housing three of SK hynix's chip factories, with the first cleanroom coming online by December 2028.
SK hynix's new NAND flash technology, called HBF, can match the performance of HBM while offering up to 16 times more capacity. Samsung, SK hynix's main rival in the memory market, is also working on vertical memory technologies to stack memory directly onto logic circuits, potentially increasing processing speeds by eight times and memory density by a factor of ten.
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