Samsung debuts three next-generation memory technologies for AI data centers — zHBM, zNAND-O, and BV-NAND all rely on advanced wafer bonding technologies
Samsung uses FMS to unveil three next-generation memory technologies — zHBM, zNAND-O, and BV-NAND — that target different markets, but all rely on advanced wafer-bonding techniques.
Samsung unveiled three innovative memory technologies at the Future of Memory and Storage (FMS) 2026 conference. These technologies, zHBM, zNAND-O, and BV-NAND, all utilize advanced wafer bonding techniques. zHBM is a custom HBM ultra-high-performance memory that can be directly placed on top of logic dies, offering increased bandwidth, reduced latency, and improved power efficiency. zNAND-O is a high-performance NAND memory designed to be put on top of logic dies for edge AI systems, featuring improved I/O performance and low latency.
Lastly, BV-NAND, another name for Samsung's 10th Generation V-NAND, is a next-generation 3D NAND technology that bonds the NAND array onto the I/O and logic wafer, resulting in higher I/O speeds and improved memory density. While Samsung has not provided specific implementation details or release timelines, these advancements hold promise for enhancing data center performance in AI applications.
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