{
  "id": 16203717,
  "title": "Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance",
  "url": "https://urgent.news/2026/10/23/microns-next-generation-3d-nand-to-double-bit-density-with-over-400",
  "topic": "tech",
  "section": "Tech",
  "published": "2026-10-23T15:32:05.000Z",
  "source": {
    "name": "Tom's Hardware",
    "slug": "tom-s-hardware",
    "url": "https://www.tomshardware.com/pc-components/ssds/microns-next-generation-3d-nand-to-double-bit-density-with-over-400-layers-offering-extreme-performance-g11-3d-nand-promises-42-gb-mm2-and-5-400-mt-s-interface-speed"
  },
  "original_language": "en",
  "account": "Micron's next-generation 3D NAND technology, slated for mass production in the second half of 2027, promises to deliver notable performance enhancements. This cutting-edge memory solution will double storage density compared to the company's current-generation NAND, increase I/O performance by up to 50%, and reduce power consumption by over 25%, according to Micron's executives.\n\nTo achieve these ambitious goals, Micron plans to leverage wafer-on-wafer bonding technology, a method pioneered by YMTC. This innovative approach involves bonding different parts of the NAND device on separate wafers, allowing for independent optimization of memory arrays and peripheral circuits. By utilizing this technique, Micron aims to create a NAND array with a larger capacity and improved performance.\n\nIn addition to wafer-on-wafer bonding, Micron is also exploring new materials and denser memory cell architectures to push the boundaries of 3D NAND scaling beyond G11. These advancements may include more energy-efficient devices and data paths, which could further improve transistor characteristics and enable further reductions in memory cell dimensions.\n\nAs Micron continues to scale 3D NAND beyond the current G11 generation, it remains focused on improving both layer count and cell dimensions. The company expects to disclose more technical details about future generations in 2027, as high-volume manufacturing ramps up in the second half of next year. Nonetheless, Micron's roadmap suggests that innovations in materials, cell architecture, and peripheral circuitry will play a crucial role in the ongoing quest for higher storage densities.",
  "summary": "Micron's G11 3D NAND promises 42 Gb/mm2 and 5,400 MT/s interface speed, enabling SSDs with extreme capacity and performance.",
  "key_points": [],
  "editors_take": null,
  "illustration": null,
  "coverage": {
    "outlets": 1,
    "also_reported_by": []
  },
  "ai_generated": true,
  "disclaimer": "Summaries, key points and the editor’s take are written by software from other outlets’ reporting and may contain errors — always check the linked original."
}