{
  "id": 14184185,
  "title": "CXMT president says company’s first 4F² DRAM will be a server DDR5 RDIMM due by year-end",
  "url": "https://urgent.news/2026/10/13/cxmt-president-says-companys-first-4f2-dram-will-be-a-server-ddr5",
  "topic": "tech",
  "section": "Tech",
  "published": "2026-10-13T11:00:00.000Z",
  "source": {
    "name": "Tom's Hardware",
    "slug": "tom-s-hardware",
    "url": "https://www.tomshardware.com/pc-components/dram/cxmt-president-says-companys-first-4f2-dram-will-be-a-server-ddr5-rdimm-due-by-year-end-vertical-transistors-cut-each-memory-cells-footprint-by-a-third-on-paper-but-no-speeds-or-capacities-yet"
  },
  "original_language": "en",
  "account": "CXMT president Cao Kanyu announced that the company's first 4F² product, a server DDR5 RDIMM, will be launched by the end of the year. The memory will utilize a denser cell layout with vertical transistors, reducing the cell's footprint by about one-third. Specific speeds and capacities for the new product have not been disclosed. Cao discussed the new RDIMM at the Integrated Chips and Chiplets Conference. The 4F² cell is 2F by 2F, approximately two-thirds the area of existing 6F² cells at the same feature size. The company has filed patents and conducted research on the technology since 2021. CXMT's transistor design, called the Vertical Surrounded Gate (VSG), has a vertically standing channel with a gate wrapped around it, enabling stronger gate control with reduced leakage. The company has over 300 published patent families related to 4F². The industry is moving towards 4F² with 3D solutions that decouple DRAM and CMOS processes, optimizing logic and cell density independently through wafer-level hybrid bonding. CXMT has been gaining manufacturing and market-share in China, with a 9.5% share of global DRAM revenue in Q2, up from 7.6% in Q1. Samsung showcased a 4F² DRAM design in its ISSCC 2026 paper, and SK hynix announced plans for a 4F² vertical-gate platform and 3D DRAM at nodes of 10nm and below.",
  "summary": "CXMT president Cao Kanyu says the company’s first 4F² DRAM product will be a DDR5 RDIMM for servers, expected by the end of 2026.",
  "key_points": [
    "CXMT president Cao Kanyu announced first 4F² DRAM will be server DDR5 RDIMM by year-end.",
    "New product uses denser cell layout with vertical transistors, reducing footprint by one-third.",
    "CXMT has filed patents and researched 4F² technology since 2021."
  ],
  "editors_take": null,
  "illustration": null,
  "coverage": {
    "outlets": 1,
    "also_reported_by": []
  },
  "ai_generated": true,
  "disclaimer": "Summaries, key points and the editor’s take are written by software from other outlets’ reporting and may contain errors — always check the linked original."
}