{
  "id": 14147457,
  "title": "CXMT's new DRAM tech to test Korean memory makers' dominance",
  "url": "https://urgent.news/2026/10/13/cxmts-new-dram-tech-to-test-korean-memory-makers-dominance",
  "topic": "tech",
  "section": "Tech",
  "published": "2026-10-13T07:57:02.000Z",
  "source": {
    "name": "The Korea Times",
    "slug": "the-korea-times",
    "url": "https://www.koreatimes.co.kr/business/tech-science/20261013/cxmts-new-dram-tech-to-test-korean-memory-makers-dominance"
  },
  "original_language": "en",
  "account": "China's CXMT is reportedly set to challenge the dominance of Korean memory makers Samsung Electronics and SK hynix with a new DRAM technology. According to reports from South China Morning Post and other Chinese media, CXMT plans to launch a server memory product by the end of the year that incorporates a next-generation memory cell architecture. This architecture, referred to as 4F square, promises to reduce the space occupied by each memory cell, potentially giving CXMT a competitive edge over its Korean counterparts.\n\nCXMT President Cao Kanyu revealed the company's plans during an industrial event in Shanghai. The 4F square design involves a design called 4F square, which reduces the area occupied by each memory cell to an equivalent of four times F squared. In contrast, the current industry standard is 6F square, indicating that the new technology could theoretically decrease the area occupied by each memory cell. F represents the minimum line width that a given DRAM manufacturing process can draw, with current processes like 1a, 1b, and 1c having F just over 10 nanometers.",
  "summary": "Concerns are growing that the technological gap between China's CXMT and Korean memory makers Samsung Electronics and SK hynix in DRAM technology has already narrowed, after the Chinese company unveiled plans to launch server memory product by the end of this year featuring a next-generation memory cell architecture that remains only on the technology road maps of the two Korean chipmakers.…",
  "key_points": [
    "CXMT plans to challenge Samsung Electronics and SK hynix dominance",
    "Introduces 4F square architecture to reduce memory cell space",
    "4F square design theoretically decreases memory cell area"
  ],
  "editors_take": null,
  "illustration": null,
  "coverage": {
    "outlets": 3,
    "also_reported_by": [
      {
        "outlet": "The Korea Times",
        "title": "CXMT's new DRAM tech to test Korean memory makers' dominance",
        "url": "https://urgent.news/2026/10/13/cxmts-new-dram-tech-to-test-korean-memory-makers-dominance-14151084",
        "published": "2026-10-13T08:17:02.000Z"
      },
      {
        "outlet": "Techmeme",
        "title": "CXMT says it plans to launch a 4F² design DRAM chip for data center servers before the end of 2026, achieving a breakthrough that rivals have pursued for years (Bloomberg)",
        "url": "https://urgent.news/2026/10/13/cxmt-says-it-plans-to-launch-a-4f2-design-dram-chip-for-data-center",
        "published": "2026-10-13T09:40:00.000Z"
      }
    ]
  },
  "ai_generated": true,
  "disclaimer": "Summaries, key points and the editor’s take are written by software from other outlets’ reporting and may contain errors — always check the linked original."
}